The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Dec. 05, 2012
Peking University, Beijing, CN;
Lifeng Liu, Beijing, CN;
Bin Gao, Beijing, CN;
Jinfeng Kang, Beijing, CN;
Xiaoyan Liu, Beijing, CN;
Yi Wang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
A method for measuring data retention characteristic of an RRAM device includes: a) controlling a temperature of a sample stage to maintain the RRAM device at a predetermined temperature; b) setting the RRAM device to a high-resistance state or a low-resistance state; c) measuring data retention time by applying a predetermined voltage to the RRAM device so that a resistive state failure of the RRAM device occurs; d) repeating the steps a)-c) to perform a plurality of measurements; e) calculating a resistive state failure probability F(t) of the RRAM device from the data retention time in the plurality of measurements; and f) fitting the resistive state failure probability F(t), and calculating predicted data retention time tby using parameters obtained from the fitting. The data retention time of the RRAM device may be predicted by combining voltage acceleration and temperature acceleration.