The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Feb. 09, 2010
Applicants:

John Paul Strachan, Millbrae, CA (US);

Julien Borghetti, Mountain View, CA (US);

Matthew D. Pickett, San Francisco, CA (US);

Gilberto Ribeiro, Menlo Park, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Inventors:

John Paul Strachan, Millbrae, CA (US);

Julien Borghetti, Mountain View, CA (US);

Matthew D. Pickett, San Francisco, CA (US);

Gilberto Ribeiro, Menlo Park, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 13/00 (2006.01); G11C 11/54 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5678 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 11/54 (2013.01); G11C 2013/0092 (2013.01);
Abstract

Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.


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