The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Mar. 14, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hillery C. Hunter, Chappaqua, NY (US);

Kyu-hyoun Kim, Mount Kisco, NY (US);

Janani Mukundan, Ithaca, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40611 (2013.01); G06F 13/1636 (2013.01); G11C 2211/4061 (2013.01);
Abstract

A method for selection of a DRAM refresh timing in a DRAM memory system is disclosed. The method may include running a workload for a first number of refresh intervals using a first DRAM refresh timing and making a first workload throughput measurement for the first number of refresh intervals. The method may also include running the workload for a second number of refresh intervals using a second DRAM refresh timing and making a second workload throughput measurement for the second number of refresh intervals. The method may further include deciding if the first throughput measurement is greater than the second throughput measurement, and then selecting the first DRAM refresh timing as a selected DRAM refresh timing, or deciding if the second throughput measurement is greater than the first throughput measurement, then selecting the second DRAM refresh timing as the selected DRAM refresh timing.


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