The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Dec. 07, 2006
Applicants:

Danning Yang, Fremont, CA (US);

Guanghong Luo, Fremont, CA (US);

Yun-fei LI, Fremont, CA (US);

Inventors:

Danning Yang, Fremont, CA (US);

Guanghong Luo, Fremont, CA (US);

Yun-Fei Li, Fremont, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01); G11B 5/39 (2006.01); H01L 21/311 (2006.01); H01L 21/314 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3163 (2013.01); G11B 5/39 (2013.01); G11B 5/3903 (2013.01); G11B 5/3932 (2013.01); H01L 21/3144 (2013.01); H01L 21/31138 (2013.01); Y10T 29/49041 (2015.01); Y10T 29/49048 (2015.01); Y10T 29/49052 (2015.01);
Abstract

The method and system for providing a magnetoresistive device are described. The method and system include depositing a plurality of magnetoresistive element layers which cover at least one device area and at least one field area. The method and system also include providing a single layer mask. The single layer mask covers a first portion of the magnetoresistive element layers in the device area(s) and exposes the magnetoresistive element layers in the field area(s). The method and system include defining the magnetoresistive element(s) using the single layer mask and depositing a hard bias layer on the device area(s) and the field area(s) after the magnetic element(s) are defined. The method and system further include performing a planarization after the hard bias layer is deposited.


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