The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 03, 2013
National Tsing Hua University, Hsinchu, TW;
Tzu-Chi Huang, Taichung, TW;
Ren-Song Tsay, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
The present invention provides a method for efficient resource-oriented power evaluation. By mapping instructions to microarchitecture components, both advantages of high-level simulation performance and fine-grained power model are obtained. The present invention effectively reduces simulation runtime overhead and provides an accurate power estimation result. The present invention is nearly as accurate as gate-level simulators, with an error rate of less than 1.2 while achieving simulation speeds of up to 20 MIPS, five orders faster than a commercial gate-level simulator. By using the present invention, it is easy to analyze power consumption profile and peak power.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile