The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
May. 09, 2013
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Ricardo P. Coimbra, Campinas, BR;
Edevaldo Pereira Silva, Jr., Campinas, BR;
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); G05F 1/10 (2006.01); G05F 3/02 (2006.01); G01R 15/04 (2006.01);
U.S. Cl.
CPC ...
G01R 15/04 (2013.01);
Abstract
Metal-Oxide-Semiconductor (MOS) voltage divider with dynamic impedance control. In some embodiments, a voltage divider may include two or more voltage division cells, each voltage division cell having a plurality of Metal-Oxide-Semiconductor (MOS) transistors, a least one of the plurality of MOS transistors connected to a signal path and at least another one of the plurality of MOS transistors connected to a control path, the voltage division cell configured to provide a voltage drop across the signal path based upon a control signal applied to the control path.