The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 06, 2007
Applicants:
Sun-oo Kim, Hopewell Junction, NY (US);
Moosung Chae, Poughkeepsie, NY (US);
Bum Ki Moon, LaGrangeville, NY (US);
Inventors:
Sun-Oo Kim, Hopewell Junction, NY (US);
Moosung Chae, Poughkeepsie, NY (US);
Bum Ki Moon, LaGrangeville, NY (US);
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3464 (2013.01); C23C 14/3407 (2013.01); C23C 14/3471 (2013.01); H01J 37/34 (2013.01); H01J 37/3414 (2013.01); H01J 37/3417 (2013.01); H01J 37/3423 (2013.01);
Abstract
A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes.