The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Sep. 21, 2011
Applicants:

Magnus Odén, Tullinge, SE;

Emma Björk, Linköping, SE;

Inventors:

Magnus Odén, Tullinge, SE;

Emma Björk, Linköping, SE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/12 (2006.01); C01B 37/02 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 33/187 (2006.01); B32B 3/26 (2006.01); B44C 1/22 (2006.01); A61K 47/02 (2006.01); C01B 33/18 (2006.01); C01B 33/193 (2006.01);
U.S. Cl.
CPC ...
C01B 37/02 (2013.01); A61K 47/02 (2013.01); B32B 3/263 (2013.01); B44C 1/227 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 33/187 (2013.01); C01B 33/18 (2013.01); C01B 33/193 (2013.01); C01P 2002/01 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2004/13 (2013.01); C01P 2004/64 (2013.01); C01P 2006/16 (2013.01); Y10T 428/24479 (2015.01);
Abstract

A substrate surface comprises at least partially at least one elongated structure, wherein each elongated structure comprises a plurality of channels, said channels extending in the direction of the longitudinal axis of the elongated structure, wherein said at least one elongated structure comprises silicon dioxide. The structures are manufactured by: a) providing a reaction solution comprising a silicate, a micelle forming agent, an alkane, a salt, and at least 1.5 M HCl, having a pH of 2 or lower, b) stirring not more than 10 minutes, c) bringing the reaction solution into contact with a substrate surface and d) treating the obtained material with one method selected from a) heat treating the material above 300° C., b) treating the material with at least one selected from HO, and HSO, c) treating the material with microwaves to digest the micelle forming agent.


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