The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 11, 2010
Applicants:
Yoshinobu Kawaguchi, Mihara, JP;
Takeshi Kamikawa, Mihara, JP;
Inventors:
Yoshinobu Kawaguchi, Mihara, JP;
Takeshi Kamikawa, Mihara, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/028 (2006.01); B82Y 20/00 (2011.01); H01S 5/223 (2006.01); H01L 33/44 (2010.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0021 (2013.01); B82Y 20/00 (2013.01); H01S 5/028 (2013.01); H01S 5/0287 (2013.01); H01S 5/2231 (2013.01); H01L 33/44 (2013.01); H01S 5/0282 (2013.01); H01S 5/221 (2013.01); H01S 5/34333 (2013.01); H01S 2304/00 (2013.01);
Abstract
A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.