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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190607 B1

PDFFull Text
Date of Patent:
Nov. 17, 2015

Filed:

Feb. 11, 2014

Magnetoresistive element and method of manufacturing the same

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Akiko Nomachi, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, LLP

Primary Examiner:

Fei Fei Yeung Lopez

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 41/47 (2013.01); H01L 41/297 (2013.01); H01L 27/22 (2006.01); H01L 41/22 (2013.01); H01L 41/12 (2006.01); H01L 41/06 (2006.01); H01L 41/332 (2013.01); H01L 41/20 (2006.01); H01L 41/27 (2013.01); H01L 27/20 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/20 (2013.01); H01L 27/222 (2013.01); H01L 41/06 (2013.01); H01L 41/12 (2013.01); H01L 41/20 (2013.01); H01L 41/22 (2013.01); H01L 41/27 (2013.01); H01L 41/297 (2013.01); H01L 41/332 (2013.01); H01L 41/47 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 27/228 (2013.01);
Abstract

According to one embodiment, a magnetoresistive element manufacturing method is provided. In this magnetoresistive element manufacturing method, a first ferromagnetic layer, tunnel barrier layer, and second ferromagnetic layer are sequentially formed on a substrate. A conductive hard mask is formed on the second ferromagnetic layer. The hard mask is patterned. A hard layer is formed on the side surface of the hard mask. The second ferromagnetic layer, tunnel barrier layer, and first ferromagnetic layer are processed by IBE in an oblique direction by using the hard mask and hard layer as masks. The IBE etching rate of the hard layer is lower than that of the hard mask.

Find Patent Forward Citations

Nomachi, Akiko. (2015). Magnetoresistive element and method of manufacturing the same (U.S. Patent No. 9190607). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9190607

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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