The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jun. 22, 2011
Applicants:
Akihide Shibata, Osaka, JP;
Tetsu Negishi, Osaka, JP;
Kenji Komiya, Osaka, JP;
Yoshifumi Yaoi, Osaka, JP;
Takeshi Shiomi, Osaka, JP;
Hiroshi Iwata, Osaka, JP;
Akira Takahashi, Osaka, JP;
Inventors:
Akihide Shibata, Osaka, JP;
Tetsu Negishi, Osaka, JP;
Kenji Komiya, Osaka, JP;
Yoshifumi Yaoi, Osaka, JP;
Takeshi Shiomi, Osaka, JP;
Hiroshi Iwata, Osaka, JP;
Akira Takahashi, Osaka, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/64 (2010.01); H01L 33/58 (2010.01); H01L 33/08 (2010.01); H01L 31/052 (2014.01); H01L 33/14 (2010.01); H01L 33/26 (2010.01); H01L 25/075 (2006.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 31/0352 (2006.01); H01L 31/054 (2014.01); H01L 33/42 (2010.01); G02F 1/1335 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/64 (2013.01); H01L 25/0753 (2013.01); H01L 31/03529 (2013.01); H01L 31/035227 (2013.01); H01L 31/0522 (2013.01); H01L 31/0547 (2014.12); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/26 (2013.01); H01L 33/58 (2013.01); G02F 1/133603 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/52 (2013.01);
Abstract
A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.