The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

May. 16, 2013
Applicant:

Stmicroelectronics (Grenoble 2) Sas, Grenoble, FR;

Inventors:

John Brunel, Grenoble, FR;

Cedric Tubert, Sassenage, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/44 (2006.01); H01L 31/107 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); G01J 1/44 (2013.01); H01L 31/02016 (2013.01); H01L 31/02019 (2013.01); H01L 31/02027 (2013.01); G01J 2001/4466 (2013.01);
Abstract

The present disclosure relates to a method for adjusting a bias voltage of a SPAD photodiode, comprising successive steps of: applying to the photodiode a first test bias voltage lower than a normal bias voltage applied to the photodiode in a normal operating mode, subjecting the photodiode to photons, reading a first avalanche triggering signal of the photodiode, applying to the photodiode a second test bias voltage, different from the first test bias voltage, subjecting the photodiode to photons, reading a second avalanche triggering signal of the photodiode, increasing the normal bias voltage if the first and second signals indicate that the photodiode did not avalanche trigger, and reducing the normal bias voltage if the first and second signals indicate that the photodiode did avalanche trigger.


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