The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

May. 21, 2014
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Gwangju Institute of Science and Technology, Gwangju, KR;

Inventors:

Yong-chul Cho, Suwon-si, KR;

Yong-tak Lee, Gwangju, KR;

Chang-young Park, Yongin-si, KR;

Byung-hoon Na, Seoul, KR;

Yong-hwa Park, Yongin-si, KR;

Gun-wu Ju, Daegu, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); G02F 1/017 (2006.01); H01L 33/06 (2010.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); G02F 1/017 (2013.01); G02F 1/01725 (2013.01); H01L 31/02327 (2013.01); G02F 2001/0155 (2013.01); G02F 2201/34 (2013.01); H01L 33/06 (2013.01);
Abstract

An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.


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