The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Sep. 28, 2011
Kei Fujii, Itami, JP;
Takashi Ishizuka, Itami, JP;
Katsushi Akita, Itami, JP;
Yasuhiro Iguchi, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Youichi Nagai, Osaka, JP;
Kei Fujii, Itami, JP;
Takashi Ishizuka, Itami, JP;
Katsushi Akita, Itami, JP;
Yasuhiro Iguchi, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Youichi Nagai, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;
Abstract
A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.