The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Nov. 26, 2014
Applicant:

Sandia Corporation, Albuquerque, NM (US);

Inventors:

Igal Brener, Albuquerque, NM (US);

Nche Tumasang Fofang, Albuquerque, NM (US);

Ting S. Luk, Albuquerque, NM (US);

Assignee:

Sandia Corporation, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/0216 (2014.01); H01L 31/056 (2014.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/056 (2014.12);
Abstract

The efficiency of a photovoltaic cell is enhanced by light trapping using Mie-scattering nanostructures. In one embodiment, an array of nanocylinders is formed on the front surface of a silicon film to enhance forward scattering into the film, and an array of nanocylinders is formed on the back surface to enhance backscattering so that more light is absorbed within the silicon film. In an alternate embodiment, a mirror layer is formed on the back surface of the silicon film to reflect light within the film back toward the front-surface nanocylinder array.


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