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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190526 B1

PDFFull Text
Date of Patent:
Nov. 17, 2015

Filed:

Apr. 12, 2012

Thin film transistor, display panel, and method for fabricating thin film transistor

Applicants:

Masao Moriguchi, Osaka, JP;

Yohsuke Kanzaki, Osaka, JP;

Yudai Takanishi, Osaka, JP;

Takatsugu Kusumi, Osaka, JP;

Inventors:

Masao Moriguchi, Osaka, JP;

Yohsuke Kanzaki, Osaka, JP;

Yudai Takanishi, Osaka, JP;

Takatsugu Kusumi, Osaka, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Matthew Landau

Assistant Examiner:

Igwe U Anya

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 21/00 (2006.01); H01L 51/40 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); H01L 29/6675 (2013.01); H01L 27/1225 (2013.01);
Abstract

A thin film transistor includes a gate electrode (), a gate insulating film () covering the gate electrode (), a semiconductor layer () made of an oxide semiconductor and provided on the gate insulating film (), a source electrode () and a drain electrode () provided on the semiconductor layer () via easily reducible metal layers () and spaced apart from each other, with a channel region (C) interposed therebetween, a conductive region (E) provided in the semiconductor layer (), and a diffusion reducing portion () provided in the semiconductor layer (), for reducing diffusion of the conductive region (E) into the channel region (C).

Find Patent Forward Citations

Moriguchi, Masao. (2015). Thin film transistor, display panel, and method for fabricating thin film transistor (U.S. Patent No. 9190526). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9190526

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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