The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jul. 20, 2012
Byung Du Ahn, Hwaseong-si, KR;
Je Hun Lee, Seoul, KR;
Sei-yong Park, Suwon-si, KR;
Jun Hyun Park, Suwon-si, KR;
Gun Hee Kim, Chungbuk, KR;
Ji Hun Lim, Goyang-si, KR;
Jae Woo Park, Seongnam-si, KR;
Jin Seong Park, Cheonan-si, KR;
Toshihiro Kugimiya, Hyogo, JP;
Aya Miki, Hyogo, JP;
Shinya Morita, Hyogo, JP;
Tomoya Kishi, Hyogo, JP;
Hiroaki Tao, Hyogo, JP;
Byung Du Ahn, Hwaseong-si, KR;
Je Hun Lee, Seoul, KR;
Sei-Yong Park, Suwon-si, KR;
Jun Hyun Park, Suwon-si, KR;
Gun Hee Kim, Chungbuk, KR;
Ji Hun Lim, Goyang-si, KR;
Jae Woo Park, Seongnam-si, KR;
Jin Seong Park, Cheonan-si, KR;
Toshihiro Kugimiya, Hyogo, JP;
Aya Miki, Hyogo, JP;
Shinya Morita, Hyogo, JP;
Tomoya Kishi, Hyogo, JP;
Hiroaki Tao, Hyogo, JP;
Abstract
An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.