The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Feb. 12, 2010
Applicant:
Matthias Bauer, Phoenix, AZ (US);
Inventor:
Matthias Bauer, Phoenix, AZ (US);
Assignee:
ASM America, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); C23C 16/04 (2006.01); C23C 16/22 (2006.01); C23C 16/24 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01); C30B 25/02 (2006.01); C30B 29/06 (2006.01); H01L 21/3205 (2006.01); H01L 21/3215 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); C23C 16/04 (2013.01); C23C 16/22 (2013.01); C23C 16/24 (2013.01); C23C 16/32 (2013.01); C23C 16/325 (2013.01); C23C 16/45512 (2013.01); C30B 25/02 (2013.01); C30B 29/06 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 21/3215 (2013.01); H01L 21/32056 (2013.01); H01L 29/165 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01);
Abstract
Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×10atoms cmof an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.