The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jan. 17, 2014
Rohm Co., Ltd., Kyoto, JP;
Kensuke Sawase, Kyoto, JP;
Motohiro Toyonaga, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.