The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Mar. 11, 2013
Applicant:

U.s. Army Research Laboratory, Adelphi, MD (US);

Inventor:

Osama M. Nayfeh, Adelphia, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7789 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/66431 (2013.01); H01L 29/78603 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01);
Abstract

Electronic devices and methods of forming an electronic device are disclosed herein. An electronic device may include a first 2D atomic crystal layer; a second 2D atomic crystal layer disposed atop the first 2D atomic crystal layer; and an interface comprising van-der-Waals bonds between the first 2D atomic crystal layer and the second 2D atomic crystal layer. A method of forming an electronic device may include depositing a first 2D atomic crystal layer; and depositing a second 2D atomic crystal layer atop the first 2D atomic crystal layer; wherein an interface is formed between the first 2D atomic crystal layer and the second 2D atomic crystal layer via van-der-Waals bonding.


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