The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190477 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 17, 2015

Filed:

Apr. 11, 2014
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Tomoyuki Furuhata, Suwa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 2229/00 (2013.01);
Abstract

A semiconductor device includes: a semiconductor substrate including a first surface; a body region positioned in the semiconductor substrate and positioned to be in contact with the first surface; a gate insulating film positioned to be in contact with the body region on the first surface; a gate electrode positioned on the gate insulating film; a first insulator film covering at least a portion of a side surface of the gate electrode; a contact region positioned to be in contact with the first surface at a position different from that of the gate electrode, in a plan view relative to the first surface, in the body region; and a second insulator film including a material different from that of the first insulator film, positioned on the body region, the gate electrode, and the first insulator film, and including a contact hole on the contact region.


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