The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Nov. 05, 2014
Seiko Epson Corporation, Tokyo, JP;
Shigeyuki Sakuma, Sakata, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
A semiconductor device including field insulating films and having first corner portions, provided on a P-type epitaxial growth layer; an N-type cathode that is provided in the P-type epitaxial growth layer and is located on the inner sides of the field insulating films; and a P-type anode that is formed on the cathode so as to be in contact with the cathode and covers the first corner portions provided on the inner sides of the field insulating films, wherein the junction between the cathode and the anode serves as a PN junction of the diode, and the PN junction is spaced apart from the first corner portions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile