The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Dec. 20, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Joon-Young Choi, Suwon-Si, KR;
Sang-Eun Lee, Hwaseong-si, KR;
Sam-Jong Choi, Suwon-si, KR;
Jin-Ho Kim, Hwaseong-si, KR;
Abstract
A nonvolatile memory device includes a substrate, an elongate isolation region including a field insulation film disposed in a trench in the substrate, and a word line crossing the insulation region and including a tunneling insulation layer on an active region of the substrate adjacent the isolation region, a charge storage layer on the tunneling insulation layer and a blocking insulation layer on the charge storage layer. A first plane index of a bottom surface of the trench has a first interface trap density and a second plane index of a sidewall of the trench has a second interface trap density equal to or less than the first interface trap density. In some embodiments, the first plane index may be (100) and the second plane index may be (100) or (310).