The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jun. 10, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Do-Hwan Kim, Gyeonggi-do, KR;
Yun-Hee Yang, Gyeonggi-do, KR;
Dae-Woo Kim, Gyeonggi-do, KR;
Jong-Chae Kim, Gyeonggi-do, KR;
Su-Hwan Lim, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/146 (2006.01); H01L 29/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 29/76816 (2013.01); H01L 29/76825 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract
An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.