The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
May. 01, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Shinobu Asayama, Kawasaki, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A well voltage supply cell includes third gate electrode group (including a third gate electrode corresponding to a first gate electrode) located symmetrically to first gate electrode group (including the first gate electrode constituting an access transistor) of a first SRAM cell, fourth gate electrode group (including a fourth gate electrode corresponding to a second gate electrode) located symmetrically to second gate electrode group (including the second gate electrode constituting an access transistor) of a second SRAM cell. a P-type impurity diffusion region located on a P well between the third gate electrode and the fourth gate electrode located opposite to each other, a first N-type impurity diffusion region located on the side of the third gate electrode closer to the first SRAM cell, and a second N-type impurity diffusion region located on the side of the fourth gate electrode closer to the second SRAM cell.