The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Feb. 24, 2014
Renesas Electronics Corporation, Kawasaki-shi, JP;
International Business Machines Corporation, Armonk, NY (US);
Kenzo Manabe, Kawasaki, JP;
Hemanth Jagannathan, Armonk, NY (US);
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure for a semiconductor device includes a semiconductor substrate and an N-channel transistor and a P-channel transistor provided on the semiconductor substrate. Each of the N-channel transistor and the P-channel transistor has a gate dielectric film on the semiconductor substrate, and a gate electrode is formed on the gate dielectric. The gate electrode comprises a metal conductive layer. The oxygen concentration in the metal conductive layer for the N-channel transistor is different from that for the P-channel transistor.