The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jul. 24, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hak-Sun Lee, Seoul, KR;
Myeongcheol Kim, Suwon-si, KR;
Cheol Kim, Hwaseong-si, KR;
Sanghyun Lee, Seoul, KR;
Abstract
Provided are a semiconductor device and a method of fabricating the same. The device may include a transistor on a substrate comprising a gate insulating pattern, a gate electrode and an impurity region, a shared contact plug electrically connected to the gate electrode and the impurity region, and an etch-stop layer between side surfaces of the gate electrode and the shared contact. The shared contact plug may include a first conductive pattern electrically connected to the first impurity region and a second conductive pattern electrically connected to the gate electrode, and a top surface of the first conductive pattern may be higher than a top surface of the gate electrode.