The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
May. 20, 2014
Applicant:
Tohoku University, Sendai-shi, Miyagi, JP;
Inventors:
Takeshi Sakai, Sendai, JP;
Tatsuro Yoshida, Sendai, JP;
Kazuhiro Yoshikawa, Sendai, JP;
Shigetoshi Sugawa, Sendai, JP;
Assignee:
TOHOKU UNIVERSITY, Miyagi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/30604 (2013.01); H01L 21/6708 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 27/14683 (2013.01);
Abstract
There is provided an etching method. A temperature at a plurality of predetermined positions on an upper surface of an Si substrate is measured during the etching processing. The etching processing includes supplying an etching solution to the upper surface of the Si substrate. An exothermic reaction occurs in the etching processing. The upper surface is heated or cooled depending on the measured value.