The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Sep. 07, 2012
Olivier Thomas, Revel, FR;
Jerome Mazurier, Cestas, FR;
Nicolas Planes, La Terrasse, FR;
Olivier Weber, Grenoble, FR;
Olivier Thomas, Revel, FR;
Jerome Mazurier, Cestas, FR;
Nicolas Planes, La Terrasse, FR;
Olivier Weber, Grenoble, FR;
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
An integrated circuit on a semiconductor substrate has logic gates comprising FDSOI-type transistors made on said substrate, including at least one first transistor comprising a gate with a first work function, and including a transistor comprising a second work function, a memory including memory cells, each memory cell comprising FDSOI type transistors, including at least one third nMOS transistor with a gate presenting a third work function, the third transistor comprising a buried insulating layer and a ground plane at least one fourth pMOS transistor with a gate presenting said third work function, the fourth transistor comprising a buried insulating layer and a ground plane, the ground planes of the third and fourth transistors being made in a same well separating these ground planes from said substrate.