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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190333 B1

PDFFull Text
Date of Patent:
Nov. 17, 2015

Filed:

Nov. 14, 2014

Semiconductor device and manufacturing method thereof

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventor:

Yuichi Hirano, Kawasaki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Steven Loke

Assistant Examiner:

Juanita B Rhodes

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 27/115 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/28282 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32053 (2013.01); H01L 21/823807 (2013.01); H01L 21/823864 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/4234 (2013.01); H01L 29/6653 (2013.01); H01L 29/6659 (2013.01); H01L 29/66833 (2013.01); H01L 29/7833 (2013.01); H01L 29/7843 (2013.01); H01L 29/792 (2013.01); H01L 29/665 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a main surface, a MONOS-type memory cell formed over the main surface and having a channel, an n-channel transistor formed over the main surface, and a p-channel transistor formed over the man surface. Nitride films are formed in a manner to contact the top surfaces of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor. The nitride films apply stress to the channels of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor.

Find Patent Forward Citations

Hirano, Yuichi. (2015). Semiconductor device and manufacturing method thereof (U.S. Patent No. 9190333). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9190333

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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