The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 06, 2014
Applicant:
Fujifilm Corporation, Tokyo, JP;
Inventor:
Kimiaki Miyamoto, Ashigara-kami-gun, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H05K 3/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 27/1292 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78636 (2013.01); H01L 29/78681 (2013.01); H05K 3/1208 (2013.01); H05K 2203/1173 (2013.01);
Abstract
A pattern formation method for forming a micropattern includes a first step of causing a first pattern-formable area at which a first pattern is to be formed on a liquid-repellent, first film that is formed on a substrate and that has a lyophilic/lyophobic variable function to be lyophilic and to reduce in thickness; a second step of forming a second film having a flat surface on the first film; and a third step of forming the first pattern at the first pattern-formable area by drying the second film.