The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jul. 23, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dong-Ju Ok, Busan, KR;
Hye-Ry No, Seoul, KR;
Kyoung-Lae Cho, Suwon-si, KR;
Sue-Jin Kim, Gwangmyeong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of determining a read voltage of a memory device includes performing a plurality of read operations with respective different read voltages on a first group of storage regions of the memory device using a first error correction rate, wherein the plurality of read operations are performed to distinguish between a pair of adjacent logic states of memory cells in the first group of storage regions, detecting a read voltage level, among the different read voltages, at which a minimum number of erroneous bits is generated in the at least one read operation, and determining a read voltage for a second group of storage regions to which a second error correction rate is applied, based on the detected read voltage level, wherein the first error correction rate is higher than the second error correction rate.