The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 19, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Hiroyuki Kutsukake, Yokkaichi, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
The voltage switching circuit comprises: an nMOS transistor having a gate connected to a first terminal that outputs an output voltage, a drain connected to a power-supply terminal, and a source connected to a second terminal; a first pMOS transistor having a source connected to the second terminal, a drain connected to the first terminal, and a gate provided with a first or second voltage, a source and a well thereof being short-circuited; and a switching circuit connected between a third terminal that supplies the input voltage and the first terminal and configured to turn on when the output voltage is supplied to the first terminal. A gate electrode of the first pMOS transistor is configured by semiconductor including p-type impurity. A concentration of p-type impurity in the gate electrode of the memory cell is different from that of the first pMOS transistor.