The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Aug. 08, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Haruki Toda, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0023 (2013.01); G11C 29/80 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01);
Abstract

A memory system according to the embodiment comprises a cell array of unit cell arrays each including memory cells; and an access circuit, wherein the memory cell changes from a first resistance state to a second resistance state on application of a first polarity voltage, and changes from the second resistance state to the first resistance state on application of a second polarity voltage, the access circuit provides the first and second lines connected to an access-targeted memory cell with access potentials, and brings at least one of the first and second lines connected to an access-untargeted memory cell into a floating state to make access to the access-targeted memory cell, the unit cell array includes first spare lines to provide redundancy for the first lines, and an alignment of the first lines includes a certain number of the first spare lines arranged in a certain cycle.


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