The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 25, 2011
Tsuyoshi Takahashi, Tsukuba, JP;
Yuichiro Masuda, Tsukuba, JP;
Shigeo Furuta, Tsukuba, JP;
Touru Sumiya, Tsukuba, JP;
Masatoshi Ono, Tsukuba, JP;
Yutaka Hayashi, Tsukuba, JP;
Toshimi Fukuoka, Tsukuba, JP;
Tetsuo Shimizu, Tsukuba, JP;
Kumaragurubaran Somu, Tsukuba, JP;
Hiroshi Suga, Narashino, JP;
Yasuhisa Naitou, Tsukuba, JP;
Tsuyoshi Takahashi, Tsukuba, JP;
Yuichiro Masuda, Tsukuba, JP;
Shigeo Furuta, Tsukuba, JP;
Touru Sumiya, Tsukuba, JP;
Masatoshi Ono, Tsukuba, JP;
Yutaka Hayashi, Tsukuba, JP;
Toshimi Fukuoka, Tsukuba, JP;
Tetsuo Shimizu, Tsukuba, JP;
Kumaragurubaran Somu, Tsukuba, JP;
Hiroshi Suga, Narashino, JP;
Yasuhisa Naitou, Tsukuba, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Funai Electric Co., Ltd., Daito-shi, JP;
Abstract
In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.