The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jul. 24, 2014
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Takanori Ueda, Kanagawa, JP;
Kazuyuki Kouno, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/14 (2006.01); G11C 5/06 (2006.01); G11C 13/00 (2006.01); G11C 7/12 (2006.01); G11C 8/14 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 7/12 (2013.01); G11C 7/14 (2013.01); G11C 8/14 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0038 (2013.01); G11C 16/28 (2013.01); G11C 2013/0054 (2013.01);
Abstract
A nonvolatile semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged in a matrix; a reference bit line; a reference source line; at least one reference cell including first and second transistors serially connected between these lines; a reference word line connected to the gate of the first transistor; and a reference driver circuit configured to control the gate voltage of the second transistor.