The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Apr. 01, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/30 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/3021 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes a photolithography process having steps of a developing solution immersing process. The steps of the developing solution immersing process includes step (a) of dropping a developing solution on a silicon carbide semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 μm and step (b) of reducing the film thickness of the developing solution film to 6 μm or less.