The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Sep. 26, 2014
Applicant:
Purdue Research Foundation, West Lafayette, IN (US);
Inventors:
Saeed Mohammadi, Zionsville, IN (US);
Mojgan Sarmadi, Zionsville, IN (US);
Hossein Pajouhi, West Lafayette, IN (US);
Assignee:
PURDUE RESEARCH FOUNDATION, West Lafayette, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 33/487 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); G01N 33/48721 (2013.01);
Abstract
A perforated metal oxide semiconductor (MOS) structure for single biomolecule, virus, or single cell detection is disclosed. The structure includes a nanochannel formed through a sensing region configured to allow a solution containing particles to pass through the perforated MOS sensor. First and second terminals are configured to measure electrical parameters representative of change of electrical characteristics of the solution as the particle passes through the perforated MOS structure.