The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Apr. 12, 2011
Applicants:

Tomohiko Nakajima, Ibaraki, JP;

Tetsuo Tsuchiya, Ibaraki, JP;

Takaaki Manabe, Ibaraki, JP;

Inventors:

Tomohiko Nakajima, Ibaraki, JP;

Tetsuo Tsuchiya, Ibaraki, JP;

Takaaki Manabe, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/24 (2006.01); C30B 1/02 (2006.01); C03C 17/00 (2006.01); C03C 17/23 (2006.01); C04B 35/465 (2006.01); C04B 35/468 (2006.01); C04B 35/495 (2006.01); C30B 7/06 (2006.01); C30B 29/30 (2006.01); H01L 41/187 (2006.01); C30B 1/04 (2006.01); C30B 1/10 (2006.01);
U.S. Cl.
CPC ...
C30B 1/023 (2013.01); C03C 17/001 (2013.01); C03C 17/23 (2013.01); C04B 35/465 (2013.01); C04B 35/4682 (2013.01); C04B 35/495 (2013.01); C30B 1/04 (2013.01); C30B 1/10 (2013.01); C30B 7/06 (2013.01); C30B 29/30 (2013.01); H01L 41/1871 (2013.01); H01L 41/1873 (2013.01); C03C 2217/23 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3205 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3213 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3291 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/441 (2013.01); C04B 2235/665 (2013.01); C04B 2235/768 (2013.01); C04B 2235/787 (2013.01);
Abstract

A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(BMO) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.


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