The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jan. 03, 2013
Applicant:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Inventor:
Bernard Diem, Echirolles, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); B81C 1/00 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00619 (2013.01); B81C 1/00103 (2013.01); B81C 1/00531 (2013.01); B81C 1/00539 (2013.01); H01L 21/3083 (2013.01); B81B 2203/033 (2013.01); B81B 2203/0392 (2013.01); B81C 2201/014 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01);
Abstract
A method for etching a desired complex pattern in a first face of a substrate, including: simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the said first face; and removing or eliminating the separating wall to expose the desired complex pattern.