The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 01, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Kimitoshi Sato, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes: simultaneously forming first and second well regions on a semiconductor substrate, wherein the second well region becomes a fixed electrode; simultaneously forming a first gate insulating film on the first well region and a fixed electrode protective film on the second well region; simultaneously forming a floating gate electrode on the first gate insulating film and a sacrificial film on the fixed electrode protective film; simultaneously forming a second gate insulating film on the floating gate electrode and a movable electrode protective film on the sacrificial film; simultaneously forming a gate electrode on the second gate insulating film and a movable electrode on the movable electrode protective film; removing the sacrificial film to form a void by; and vacuum-sealing the void to form a vacuum chamber.