The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Jun. 26, 2012
Applicants:

Mark Eskridge, Renton, WA (US);

Shifang Zhou, Redmond, WA (US);

Inventors:

Mark Eskridge, Renton, WA (US);

Shifang Zhou, Redmond, WA (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0051 (2013.01);
Abstract

A stress isolator that allows a sensor to be attached to materials of the same coefficient of thermal expansion and still provide the required elastic isolation between the sensor and the system to which it is mounted. The isolator is made of two materials, borosilicate glass and silicon. The glass is the same material as the mounting surface of the microelectromechanical system (MEMS) sensors. The silicon makes an excellent isolator, being very elastic and easy to form into complex shapes. The two materials of the isolator are joined using an anodic bond. The construction of the isolator can be specific to different types of MEMS sensors, making the most of their geometry to reduce overall volume.


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