The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9184739 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 10, 2015

Filed:

Jun. 09, 2011
Applicants:

Masashi Kaneko, Chiyoda-ku, JP;

Shizuri Tamura, Chiyoda-ku, JP;

Hiroshi Nakatake, Chiyoda-ku, JP;

Inventors:

Masashi Kaneko, Chiyoda-ku, JP;

Shizuri Tamura, Chiyoda-ku, JP;

Hiroshi Nakatake, Chiyoda-ku, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/04 (2006.01); H03K 17/042 (2006.01); H02M 1/08 (2006.01); H03K 17/16 (2006.01); H03K 17/74 (2006.01);
U.S. Cl.
CPC ...
H03K 17/04206 (2013.01); H02M 1/08 (2013.01); H03K 17/04213 (2013.01); H03K 17/168 (2013.01); H03K 17/164 (2013.01); H03K 17/74 (2013.01);
Abstract

A gate drive circuit for driving an IGBT serving as a power semiconductor device includes a constant-current gate drive circuit that charges a gate capacity of the IGBT at a constant current, and a constant-voltage gate drive circuit that is connected in parallel to the constant-current gate drive circuit between input and output terminals thereof via a series circuit constituted by a MOSFET and a resistor, and charges the gate capacity of the IGBT at a constant voltage, wherein the gate drive circuit charges the gate capacity of the IGBT using both the constant-current gate drive circuit and the constant-voltage gate drive circuit at the time of driving the IGBT.


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