The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Oct. 11, 2011
Masanori Yamaguchi, Hyogo, JP;
Ken Kataoka, Hyogo, JP;
Tsuyoshi Maesoba, Hyogo, JP;
Hiroyuki Takada, Hyogo, JP;
Hiroshige Hata, Hyogo, JP;
Masanori Yamaguchi, Hyogo, JP;
Ken Kataoka, Hyogo, JP;
Tsuyoshi Maesoba, Hyogo, JP;
Hiroyuki Takada, Hyogo, JP;
Hiroshige Hata, Hyogo, JP;
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.