The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Oct. 02, 2009
Mino Green, London, GB;
Feng-ming Liu, Reading, GB;
Mino Green, London, GB;
Feng-Ming Liu, Reading, GB;
Nexeon Ltd., Oxfordshire, GB;
Abstract
A process for etching silicon to form silicon pillars on the etched surfaces, includes treating silicon with an etching solution that includes 5 to 10M HF 0.01 to 0.1M Agions and 0.02 to 0.2M NOions. Further, NOions in the form of alkali metal, nitric acid or ammonium nitrate salt is added to maintain the concentration of nitrate ions within the above range. The etched silicon is separated from the solution. The process provides pillars, especially for use as the active anode material in lithium ion batteries. The process is advantageous because it uses an etching bath containing only a small number of ingredients whose concentration needs to be controlled and it can be less expensive to operate than previous processes.