The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Oct. 28, 2010
Applicants:

Matthew D. Pickett, San Francisco, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Gilberto Medeiros Ribeiro, Menlo Park, CA (US);

Inventors:

Matthew D. Pickett, San Francisco, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Gilberto Medeiros Ribeiro, Menlo Park, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.


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