The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jul. 08, 2011
Applicants:
Noriyoshi Seo, Hiki-gun, JP;
Atsushi Matsumura, Chichibu, JP;
Ryouichi Takeuchi, Kawasaki, JP;
Inventors:
Assignee:
SHOWA DENKO K.K, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/06 (2010.01); A01G 9/26 (2006.01); H01L 33/12 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/30 (2013.01); A01G 9/26 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/405 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49107 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/12032 (2013.01);
Abstract
A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer () composed of n layers of a strained light emitting layer () and n−1 layers of a barrier layer (), wherein when a barrier layer exists, the light emitting layer () has a structure in which one strained light emitting layer () and one barrier layer () are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer () is not more than 250 nm.