The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

May. 11, 2012
Applicants:

Sukkoo Jung, Seoul, KR;

Younghak Chang, Seoul, KR;

Hyunggu Kim, Seoul, KR;

Kyuhyun Bang, Seoul, KR;

Inventors:

Sukkoo Jung, Seoul, KR;

Younghak Chang, Seoul, KR;

Hyunggu Kim, Seoul, KR;

Kyuhyun Bang, Seoul, KR;

Assignee:

LG Electronics Inc., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

Disclosed are a non-polar nitride-based light emitting device and a method for fabricating the same. The non-polar nitride-based light emitting device includes a substrate, a first-type semiconductor layer on the substrate, an active layer on the active layer, a second-type semiconductor layer on the active layer, a light extraction layer on the second-type semiconductor layer and including at least one layer including indium having a plurality of unit structures having an inverted pyramidal intaglio shape, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer.


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