The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Sep. 28, 2011
Meoung Whan Cho, Yongin, KR;
Seog Woo Lee, Yongin, KR;
Ryuichi Toba, Akita, JP;
Yoshitaka Kadowaki, Akita, JP;
Meoung Whan Cho, Yongin, KR;
Seog Woo Lee, Yongin, KR;
Ryuichi Toba, Akita, JP;
Yoshitaka Kadowaki, Akita, JP;
BBSA LIMITED, Hong Kong, CN;
DOW ELECTRONICS MATERIALS CO., LTD., Tokyo, JP;
Abstract
The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.