The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

May. 29, 2012
Applicants:

Shinichi Abe, Uji, JP;

Akio Yamamoto, Higashiomi, JP;

Seiji Oguri, Higashiomi, JP;

Kazumasa Umesato, Shiga, JP;

Inventors:

Shinichi Abe, Uji, JP;

Akio Yamamoto, Higashiomi, JP;

Seiji Oguri, Higashiomi, JP;

Kazumasa Umesato, Shiga, JP;

Assignee:

KYOCERA Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/065 (2012.01); H01L 31/032 (2006.01); H01L 31/0749 (2012.01); H01L 31/046 (2014.01); H01L 31/0465 (2014.01);
U.S. Cl.
CPC ...
H01L 31/065 (2013.01); H01L 31/0322 (2013.01); H01L 31/046 (2014.12); H01L 31/0465 (2014.12); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract

A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.


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